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Insulated Gate Bipolar Transistor IGBT G25t120d to-247

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Insulated Gate Bipolar Transistor IGBT G25t120d to-247

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

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DESCRIPTION

Basic Info
Model NO. G25T120D
Batch Number 2021
Brand Wxdh
Transport Package Tube
Trademark WXDH
Origin Wuxi, China
HS Code 8541290000
Product Description

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

PARAMETERSYMBOLRATINGUNIT
Collector-Emitter VoltageVCES1200V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)50A
Collector Current (Tc=100ºC)25A
Pulsed Collector CurrentICM75A
Diode Continuous Forward CurrentIF @TC = 100 °C25A
Diode Maximum Forward CurrentIFM75A
Total DissipationTC=25ºCPD278W
TC=100ºCPD111W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.0V
@ IC =25A and TC = 100°C
Extremely enhanced avalanche capability
Applications
Aircondition
Welding
UPS
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G25T120DTO-247G25T120DPb-freeTube300/box

Insulated Gate Bipolar Transistor IGBT G25t120d to-247


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