Language
Infineon’s EiceDRIVER 125 V high-side gate driver protects battery-driven applications in the event of a fault

News

HomeHome / News / Infineon’s EiceDRIVER 125 V high-side gate driver protects battery-driven applications in the event of a fault
search
RECENT NEWS

Aug 15, 2023

Infineon introduces the next generation of dual

Jun 07, 2023

Mouser added microcontrollers to extensive Embedded Processors

Apr 22, 2023

MIPS taps Siemens FPGA for RISC

Oct 05, 2023

What Are the Best Microcontrollers on the Market Today?

Apr 30, 2023

Renesas Introduces Low

SEND YOUR INQUIRY
SUBMIT

Oct 15, 2024

Infineon’s EiceDRIVER 125 V high-side gate driver protects battery-driven applications in the event of a fault

In battery-powered applications such as motor drives and switched-mode power supplies (SMPS), the power supply architecture often requires that a module can be disconnected from the main supply rail

In battery-powered applications such as motor drives and switched-mode power supplies (SMPS), the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. To achieve this functionality, it is common to use high-side disconnect switches (e.g. MOSFETs) to prevent a load short circuit from affecting the battery. Infineon Technologies AG has now introduced the EiceDRIVER 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault.

The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an integrated charge pump with an external capacitor to provide strong start-up. The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout (UVLO) protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package, making it ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions.

The 1EDL8011 has a wide operating voltage range of 8 V to 125 V and a high gate sinking current of up to 1 A, allowing for efficient switching. Additionally, the product has an extremely low off-mode quiescent current of 1 µA, helping to minimize power consumption in sleep mode. The device also includes a VDS sense feature that is used to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.