Power IGBTs (Insulated Gate Bipolar Transistors) | Renesas

News

HomeHome / News / Power IGBTs (Insulated Gate Bipolar Transistors) | Renesas

Oct 14, 2024

Power IGBTs (Insulated Gate Bipolar Transistors) | Renesas

Renesas insulated-gate bipolar transistors (IGBTs) help designers realize both low saturation voltage and fast switching through thin wafer technology. They, in turn, help to minimize power loss in

Renesas insulated-gate bipolar transistors (IGBTs) help designers realize both low saturation voltage and fast switching through thin wafer technology. They, in turn, help to minimize power loss in power conversion systems.

Renesas offers a lineup of products with different voltage tolerances and design topologies suited to various applications including 650V to 1200V products for Automotive, UPS, and industrial inverters, 1800V IGBTs for wind power generation or solar inverter applications.

Learn more about design topologies

The IGBT product series for inverters is recommended for frequencies of 1k ~ 50kHz and is ideal for universal power supplies (UPS), motor control, solar power generation, and welding applications.

Power IGBTs for Inverters

Renesas' IGBT devices for power factor correction are recommended for frequencies of 50Hz ~ 100kHz and are ideal for UPS, solar power generation, and welding applications.

Power IGBTs for PFC

Renesas “AE series” IGBT is a product optimized for automotive applications using process technology with a unique trench gate configuration.

Power IGBTs for Automotive