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100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

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100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench t

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DESCRIPTION

Basic Info
Model NO. 30H10K
Batch Number 2021
Brand Wxdh
Transport Package Tape, Reel
Trademark WXDH
Origin Wuxi, China
HS Code 8541290000
Product Description

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b


100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
Features
Fast Switching
Low ON Resistance(Rdson≤0.55mΩ)
Low Gate Charge(Typ: 43nC)
Low Reverse Transfer Capacitances(Typ: 215pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Inverter management system
Electric Tools
Automotive Electronics
PARAMETERSYMBOLVALUEUNIT
30H10/30H10I/30H10E/30H10K/30H10B30H10F
Maximum Drian-Source DC VoltageVDS30V
Maximum Gate-Drain VoltageVGS±20V
Drain Current(continuous)ID(T=25ºC)100A
(T=100ºC)70A
Drain Current(Pulsed)IDM280A
Single Pulse Avalanche EnergyEAS200mJ
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot6024W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
30H10TO-220C30H10Pb-freeTube1000/box
30H10FTO-220F30H10FPb-freeTube1000/box
30H10BTO-25130H10BPb-freeTube3000/box
30H10KTO-25230H10KPb-freeTape & Reel2500/box
30H10ITO-26230H10IPb-freeTube1000/box
30H10ETO-26330H10EPb-freeTape & Reel800/box

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b


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